VLSI Definitions | |
| Definitions of the terms that are often used in Chip design world. Please help us to improve the list. You can add VLSI terms and its definitions with out registering in the site. | |
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| There are 257 entries in the glossary. | |
| Pages: «1 2 3 4 5 6 7 8 9 | |
| Term | Definition |
| Wafer charging | Process of acquiring static electric charge by the wafer during processing; highly undesired effect that needs to be monitored and controlled. |
| Wafer Diameter | Depending on material and needs semiconductor substrates are available in the form of circular \"wafers\" 0.5 mm to 1 mm thick and ranging in diameter from 1 inch (25 mm) to 12 inch (300 mm). |
| wafer fab | Semiconductor processing facility which turns wafers into integrated circuits. |
| Wafer Fabrication | Process in which single crystal semiconductor in the form of a rod or boule in transformed by cutting, grinding, polishing, and cleaning into circular wafer (with desired diameter) used in semiconductor manufacturing. |
| Wafer flat | A feature machined at the perimeter of the semiconductor wafer; location and number of wafer flats contain information on the orientation of the crystal and the dopant type. |
| Watchdog | A feature of a microprocessor supervisory circuit that monitors software execution in a microprocessor or microcontroller. It takes appropriate action if the processor gets stuck in an infinite execution loop. |
| Wet ecthing | Etching process in semiconductor processing relying on chemical reaction in the liquid phase; highly isotropic but can be very selective. |
| Wet oxidation | Thermal oxidation of silicon carried out in water vapor containing oxygen, or in steam; significantly higher oxide growth rate as compared to dry oxidation; used to form relatively thick films of SiO2 on Si surface; |
| Wire bonding | Part of the chip assembly process in which very thin (about 30 micrometer in diameter) gold wire is used to connect chip and the package; |
| Worst-case | A version or versions of a circuit whereby certain key distributed parameters, such as temperature, process variation, and radiation effects, are set to values within their specified ranges that cause the circuit to have maximum deviation from its nominal operation. |
| X-Ray Photoelectron Spectroscopy | surface analysis method used to determine chemical composition of solid surfaces, allows determination of bonding energy, analysis is based on the determination of energy of electrons emitted from the solid as a result of irradiation with monochromatic X-rays, very useful in detecting on Si surface Si-suboxides, as well as O, F, C. |
| Yield | The percentage of successfully-fabricated dice in a given wafer lot. |
| Yield | The percentage of good chips compared to the total chips produced per wafer. |
| YIG | Yttrium-iron-garnet is a ferrimagnetic material used for solid-state lasers and for microwave and optical communications devices. |
| Zener diode | semiconductor diode exploiting Zener tunneling resulting from impact ionization taking place in the p-n junction at the very high electric field. |
| zener effect | occurs in heavily doped p-n junctions at high reverse-bias voltage; energy bands in the junction region are sloped in such way that electron may tunnel directly from the valence band in n-type region to the conduction band in p-type region causing rapid increase of curreent; may cause breakdown of p-n junction but also can be used in a controlled fashion to make a functional device |
| Zerbst plot | The way of plotting capacitance vs. time relationship for MOS capacitor pulsed into deep depletion; allows determination of generation and recombination lifetime in semiconductor substrate. |
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